发明名称 |
METHOD OF FORMING 3-DIMENSIONAL STRUCTURE ON WAFER WITH UNIFORMLY COATED RESIST |
摘要 |
<p>PURPOSE: A method is provided to coat uniformly a resist layer on a wafer with a 3-dimensional structure by immersing only an active side of the wafer in predetermined resist and applying a voltage between the wafer and the resist. CONSTITUTION: Each of 3-dimensional structures is electrically connected to a bonding pad of a wafer(1) through an interconnection. Electrophoretic resist(5) is used as photoresist. A resist coating layer is formed on the wafer with 3-dimensional structures by immersing an active side of the wafer in the electrophoretic resist and applying a voltage between the wafer and the electrophoretic resist.</p> |
申请公布号 |
KR20040051527(A) |
申请公布日期 |
2004.06.18 |
申请号 |
KR20030089433 |
申请日期 |
2003.12.10 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BRINTZINGER AXEL;UHLENDORF INGO |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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