发明名称 METHOD OF FORMING 3-DIMENSIONAL STRUCTURE ON WAFER WITH UNIFORMLY COATED RESIST
摘要 <p>PURPOSE: A method is provided to coat uniformly a resist layer on a wafer with a 3-dimensional structure by immersing only an active side of the wafer in predetermined resist and applying a voltage between the wafer and the resist. CONSTITUTION: Each of 3-dimensional structures is electrically connected to a bonding pad of a wafer(1) through an interconnection. Electrophoretic resist(5) is used as photoresist. A resist coating layer is formed on the wafer with 3-dimensional structures by immersing an active side of the wafer in the electrophoretic resist and applying a voltage between the wafer and the electrophoretic resist.</p>
申请公布号 KR20040051527(A) 申请公布日期 2004.06.18
申请号 KR20030089433 申请日期 2003.12.10
申请人 INFINEON TECHNOLOGIES AG 发明人 BRINTZINGER AXEL;UHLENDORF INGO
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L21/60 主分类号 H01L21/60
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