SEMICONDUCTOR DEVICE HAVING A BOND PAD AND METHOD FOR ITS FABRICATION

摘要

A bond pad ( 200 ) has a first wire bond region ( 202 ) and a second wire bond region ( 204 ). In one embodiment, the first wire bond region ( 202 ) extends over a passivation layer ( 18 ). In an alternate embodiment, a bond pad ( 300 ) has a probe region ( 302 ), a first wire bond region ( 304 ), and a second wire bond region ( 306 ). In one embodiment, the probe region ( 302 ) and the wire bond region ( 304 ) extend over a passivation layer ( 18 ). The bond pads may have any number of wire bond and probe regions and in any configuration. The ability for the bond pads to have multiple wire bond regions allows for multiple wire connections to a single bond pad, such as in multi-chip packages. The ability for the bond pads to extend over the passivation layer also allows for reduced integrated circuit die area.