| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device having a metal gate electrode is provided to prevent the oxidation of the gate electrode by forming a nitride layer at both sidewalls of the gate electrode. CONSTITUTION: A gate isolating layer(23) is formed on a semiconductor substrate(21). A polycrystalline silicon layer(24), a metal layer(25), and a hard mask(26) are sequentially formed on the gate isolating layer. A plurality of metal gate electrodes are formed by selectively etching the resultant structure until the substrate is exposed. An oxidation barrier(27) is formed at both sidewalls of the gate electrode by using a plasma treatment. An insulating layer(28) and an interlayer dielectric(29) are sequentially formed on the resultant structure. A mask(30) for a contact hole is formed on the resultant structure after a heat treatment. A spacer(28a) is formed at both sidewalls of the gate electrode by selectively etching the interlayer dielectric and the insulating layer using the mask as an etching mask. Preferably, the oxidation barrier and the spacer are made of a nitride layer.
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