发明名称 |
Semiconductor memory device and method for the production thereof |
摘要 |
A semiconductor memory device with a phase transformation memory effect includes at least one memory element in a semiconductor substrate, and a cavity arrangement including at least one cavity in spatial proximity to the respective memory element. The cavity is in spatial arrangement with the respective memory element so as to reduce thermal coupling of the respective memory element to the areas surrounding the memory element, which also reduces the thermal conductivity between memory element and the areas surrounding the memory element. |
申请公布号 |
AU2003292985(A8) |
申请公布日期 |
2004.06.18 |
申请号 |
AU20030292985 |
申请日期 |
2003.11.24 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
THOMAS MIKOLAJICK;WOLFGANG WERNER;HELMUT KLOSE |
分类号 |
H01L27/24;H01L45/00;(IPC1-7):H01L45/00;H01L21/824;H01L27/112 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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