| 摘要 |
PURPOSE: A method for fabricating a thin film transistor of an LCD(Liquid Crystal Display) integrated with a driving circuit is provided to reduce the number of masks to improve production yield. CONSTITUTION: A buffer layer(105) is formed on an insulating substrate(100). A polysilicon semiconductor layer(115a,120a) of a pixel part and a CMOS(complementary metal oxide semiconductor) part is formed on the buffer layer through the first mask process. A gate electrode(133,135) including a gate insulating layer(125) is formed on the semiconductor layer through the second mask process. An n-type impurity is doped into the substrate. A p+ doping shielding pattern is formed on the substrate to completely cover the semiconductor layer through the third mask process. A p-type impurity is doped into the substrate to make an exposed semiconductor layer of the CMOS part into a p-type ohmic contact layer(120d). An interlevel insulating layer(145a,145b) is formed on the substrate. Semiconductor layer contact holes(148a,148b,149a,149b) are formed through the fourth mask process. n+ doping is carried out to form an n-type ohmic contact layer(115c) in the semiconductor layer. A metal is deposited on the substrate to form source and drain electrodes through the fifth mask process. A nitride silicon is deposited on the substrate to form a passivation layer having a drain electrode contact hole through the sixth mask process.
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