METHOD FOR FORMING POLYCRYSTALLINE SILICON

摘要

PURPOSE: A method for forming polycrystalline silicon is provided to reduce process time and fabrication cost, and improve the surface characteristics for a gate isolating layer by forming an amorphous silicon layer on a catalyst metal layer and simultaneously carrying out a crystallization on the amorphous silicon layer. CONSTITUTION: A catalyst metal layer(230) is formed on a substrate(210). An amorphous silicon layer is deposited on the catalyst metal layer and simultaneously the amorphous silicon layer is transformed into a polycrystalline silicon layer(220a) by crystallization on the amorphous silicon layer. Preferably, the depositing and crystallizing process are carried out by using a PECVD(Plasma Enhanced Chemical Vapor Deposition) apparatus or an LPCVD(Low Pressure Chemical Vapor Deposition) apparatus at the temperature of 550-600 °C.