| 摘要 |
PURPOSE: A reading method of a semiconductor memory device is provided to prevent the decrease of a sensing margin and refresh characteristics by dividing a bit line into two according to an address value of a column line, thereby reading a memory cell connected to one of the divided two. CONSTITUTION: A word line is branched into a metal line(ML1) and a metal line(ML2) which is connected to the word line through an inverter. The metal line(ML1) connects to odd cells(C1,C3) among memory cells. The metal line(ML2) connects to even cells(C2,C4) among the memory cells. In case that an input of an address is '1', the cells(C1,C3) connected to the metal line(ML1) are activated while the cells(C2,C4) connected to the metal line(ML2) are inactivated. Otherwise, if the output is '0', the cells(C2,C4) connected to the metal line(ML2) are activated while the cells(C1,C3) connected to the metal line(ML1) are inactivated.
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