| 摘要 |
PURPOSE: A method for polishing a silicon wafer is provided to be capable of improving the flatness of the upper surface of the silicon wafer and preventing the lower surface of the silicon wafer from being polished. CONSTITUTION: A silicon wafer is prepared(P). An oxide layer is formed on the upper and lower surface of the silicon wafer, respectively(S1). The first oxide layer alone on the upper surface of the silicon wafer is removed from the resultant structure(S2). Both surfaces of the silicon wafer are simultaneously polished(S3). The second oxide layer on the lower surface of the silicon wafer is removed from the resultant structure and a cleaning process is carried out on both surfaces of the resultant structure(S4). The upper surface alone of the resultant structure is polished as much as 1-3 μm(S5).
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