| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor structure capable of withstanding short-circuit effects, having small parasitic capacitance in the vicinity of the source-drain, and having a small leak current and a small junction capacitance at the source-drain junction. SOLUTION: In the structure, there exist: a gate electrode 102 via a gate oxide film 101; at both sides of the gate electrode, a first impurity diffusion region 106 of an opposite conductivity type to a well that will be part of the source-drain region via a gate electrode side wall 105; under the gate electrode side wall, a second impurity diffusion region 104 that is shallower than the first impurity diffusion region and the conductivity type of which is the same as that of the first impurity diffusion region, in such a manner as to be adjacent to a channel region immediately under the gate electrode; a titan silicide film 107 on the surface of the first impurity diffusion region at both sides of the gate electrode side wall and on the upper part of the gate electrode; and at least at the lower part of the titan silicide film, a third impurity diffusion region 108, the concentration of which is higher than that of the first impurity diffusion region, the conductivity type of which is the same as that of the first and second impurity diffusion regions, and which is located in the first impurity diffusion region. COPYRIGHT: (C)2004,JPO
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