NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor element of a counter electrode structure wherein contact resistance is reduced. SOLUTION: In the nitride semiconductor element having a counter electrode structure, the surface showing n-polarity of a nitride semiconductor has a tilting surface excepting at least (000-1) surface and an electrode is formed. The surface showing n-polarity of the nitride semiconductor is uneven. A tilting surface excepting the (000-1) surface is formed in a step side surface of uneven level difference. The off-angle from the (000-1) surface of a tilting surface excepting the (000-1) surface is≥0.2°and≤90°. COPYRIGHT: (C)2004,JPO