METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND LASER IRRADIATION APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a laser irradiation apparatus that restrains unevenness in a surface condition or crystallinity of a semiconductor film in order to crystallize the semiconductor film uniformly; in addition, a production method of the semiconductor device using the laser irradiation apparatus, which restrains on-current of TFT, mobility, and scattering of a threshold value; and a semiconductor device produced using the production method. SOLUTION: In a production method of a semiconductor device, a rare gas is added to a semiconductor film formed on an insulating surface using an ion-doping method, and laser light is irradiated to the semiconductor film added with the rare gas under a rare-gas atmosphere. The semiconductor film added with the rare gas is applied with a magnetic field in the laser light irradiation. COPYRIGHT: (C)2004,JPO