发明名称 |
Dielectric film, its formation method, semiconductor device using the dielectric film and its production method |
摘要 |
A high-quality dielectric film is formed by generating plasma of a high electron density by a method such as diluting a rare gas or raising a frequency of a power supplier, and generating oxygen atoms or nitrogen atoms of a high density. The dielectric film contains silicon oxide in which the composition ratio of silicon and oxygen is between (1:1.94) and (1:2) both inclusive, silicon nitride in which the composition ratio of silicon and nitrogen is between (1:1.94) and (1:2) both inclusive, or silicon oxynitride in which the composition ratio of silicon and nitrogen is between (3:3.84) and (3:4) both inclusive.
|
申请公布号 |
US2004113227(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20030726870 |
申请日期 |
2003.12.02 |
申请人 |
GOTO MASASHI;NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA |
发明人 |
GOTO MASASHI;NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA |
分类号 |
H01L21/31;H01L21/316;H01L21/318;H01L21/336;H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|