发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
The present invention provides a semiconductor device wherein the area of a peripheral circuit region with respect to a pixel region is reduced, and provides a manufacturing method of the semiconductor device. A semiconductor device according to the present invention is characterized by having a pixel region 1, peripheral circuit regions 2a to 2c arranged in at least a part of the periphery of the pixel region, and a wiring formed in the peripheral circuit region, and by having a wiring multilayered with two or more layers. At least one layer of the multilyered wiring is formed from a low resistance material. Transistors are formed in the peripheral circuit region, and the multilayer wiring with two or more layers is formed on the upper side of the transistors.
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申请公布号 |
US2004113142(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20030717562 |
申请日期 |
2003.11.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA |
发明人 |
ISHIKAWA AKIRA;FUKUSHIMA YASUMORI |
分类号 |
G02F1/1368;G02F1/1345;G02F1/1362;H01L21/3205;H01L21/768;H01L21/77;H01L21/84;H01L23/52;H01L27/12;H01L29/786;(IPC1-7):H01L29/06;H01L31/032 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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