NONVOLATILE SONOS MEMORY HAVING VERTICAL CHANNEL, ITS MANUFACTURING METHOD, AND PROGRAMMING METHOD OF MEMORY

摘要

PROBLEM TO BE SOLVED: To provide an SONOS memory having a vertical channel, a manufacturing method of the SONOS memory, and a programming method of the memory.

SOLUTION: The SONOS memory having the vertical channel provides a high-integration-degree, large-capacity memory, where a channel width is narrowed. The SONOS memory comprises a substrate; a first insulating layer laminated on the substrate; a semiconductor layer that is patterned in a specific shape on the upper surface of the first insulating layer and has source and drain electrodes apart by a specific interval; a second insulating layer positioned between the source and drain electrodes on the upper surface of the semiconductor layer; a memory layer deposited on the side between the source and drain electrodes of the semiconductor layer and the side and upper surface of the second insulating layer and has an electron transfer channel and an electron accumulation layer; and a gate electrode that is deposited on the upper surface of the memory layer and adjusts electron transfer in the memory layer.

COPYRIGHT: (C)2004,JPO