发明名称 |
FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE |
摘要 |
A method of forming a capacitor, comprises the steps of (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. Also, a capacitor comprises a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers; a shoulder layer extending from the substrate to the matrix; and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate. |
申请公布号 |
WO2004051711(A2) |
申请公布日期 |
2004.06.17 |
申请号 |
WO2003SG00271 |
申请日期 |
2003.11.17 |
申请人 |
INFINEON TECHNOLOGIES AG;EGGER, ULRICH;ZHUANG, HAOREN;HORNIK, KARL |
发明人 |
EGGER, ULRICH;ZHUANG, HAOREN;HORNIK, KARL |
分类号 |
H01L21/02;H01L21/311;H01L21/316 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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