Microelectronic component e.g. FET for high density memory, has low ohmic tungsten nitride barrier layer

摘要

A microelectronic component comprises at least a tungsten nitride barrier layer (6) of formula WNx, where x = 0.3 to 0.5. Preferably, there is a tungsten layer on the barrier layer and the device is a field effect transistor. An Independent claim is also included for a production process for the above.