发明名称 |
OXIDE SINTERED COMPACT AND SPUTTERING TARGET, AND METHOD FOR MANUFACTURING OXIDE TRANSPARENT ELECTRODE FILM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sintered compact target which is a sintered compact target for manufacturing an oxide transparent electrode film having excellent light transmissivity not only in a visible light region but in an IR region as well and having a low resistance value, hardly gives rise to arcing in spite of application of high electric power in DC sputtering deposition using a power source not having an arcing suppression function, permits high-speed deposition accordingly, and does not gives rise to arcing in spite of application of the electric power for a long time. <P>SOLUTION: The sintered compact target mainly consists of indium oxide and titanium, in which the content of the titanium is 0.003 to 0.120 in Ti/In atomic ratio and the specific resistance is ≤1 kΩcm. Further, the specific resistance is preferably ≤1x10<SP>-2</SP>kΩcm. The content of the titanium is preferably 0.003 to 0.019 in Ti/In atomic ratio. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004168636(A) |
申请公布日期 |
2004.06.17 |
申请号 |
JP20030332879 |
申请日期 |
2003.09.25 |
申请人 |
SUMITOMO METAL MINING CO LTD |
发明人 |
ABE TAKAYUKI;ISHIYAMA NORIKO;OBARA TAKESHI |
分类号 |
C04B35/00;C04B35/495;C23C14/34;G09F9/00;G09F9/30;H01B13/00;H01L31/04 |
主分类号 |
C04B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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