发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device in which an internal current, such as a leakage current and a data writing current, can be evaluated and set with simple circuit configurations, and a semiconductor memory device. SOLUTION: An operating current is supplied from power source nodes 43a and 43b to internal circuits 42a and 42b. In a test mode, the current supply from a power supply voltage Vcc to the power source nodes 43a and 43b is stopped by current switches 102a and 102b and an externally adjustable test current is supplied. The test current is set according to the acceptable value of the leakage current in the internal circuits 42a and 42b. Evaluation is made as to whether the leakage current in the internal circuits 42a and 42b is not greater than the acceptable value or not in accordance with the output of a voltage comparison circuit 130 detecting a voltage drop at the power source nodes 43a and 43b. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004171730(A) 申请公布日期 2004.06.17
申请号 JP20030276468 申请日期 2003.07.18
申请人 RENESAS TECHNOLOGY CORP 发明人 OISHI TSUKASA
分类号 G01R31/28;G11C11/15;G11C13/00;G11C29/00;G11C29/02;G11C29/04;(IPC1-7):G11C29/00 主分类号 G01R31/28
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