发明名称 PLASMA CHEMICAL VAPOR DEPOSITION METHOD AND PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM BY PULSE DISCHARGE
摘要 PROBLEM TO BE SOLVED: To provide a plasma chemical vapor deposition method and a plasma chemical vapor deposition system by pulse discharge which realize production of a thin film such as a diamond film having a high film deposition rate and satisfactory film quality or a DLC (diamond like carbon) film having satisfactory adhesiveness with a substrate. SOLUTION: In the plasma chemical vapor deposition method to a substrate by pulse discharge, a pulse power supply is used which is provided with: a DC power supply; an intelligent power module and a pulse transformer for interrupting the output the DC power supply; a high-voltage transformer; and a resistance and a diode for discharging a voltage from the high-voltage side of the high-voltage transformer, discharge by discharge electrodes consisting of a cathode and an anode and generating plasma from a gaseous starting material is formed into pulse, and the rising time of the pulse voltage from the transmission of the pulse by the pulse transmitter till the time at which the discharge voltage reaches the discharge starting voltage is controlled to≤20μs. Thus, stable pulse discharge is performed under a gas pressure equal to or below an atmospheric pressure. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004169183(A) 申请公布日期 2004.06.17
申请号 JP20030377421 申请日期 2003.11.06
申请人 JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 NODA MIKIO
分类号 C23C16/515;C23C16/27;H01L21/205;(IPC1-7):C23C16/515 主分类号 C23C16/515
代理机构 代理人
主权项
地址