| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-density MRAM (Magnetic Random Access Memory) which overcomes the drawback of a known MRAM that the effective reduction of its volume is heretofore infeasible. SOLUTION: In the MRAM, a control element for data reading is formed by connecting magnetic memory elements in parallel or in series on the magnetic multilayer films having different resistance characteristics and by connecting transistors to the magnetic memory elements. As a result, the purpose of the high-density package of the MRAM is achieved without requiring intricate read flows and clocks. COPYRIGHT: (C)2004,JPO
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