| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a carrier moving speed by applying a pulling stress to the channel area only of a desired MOS transistor, and to suppress the complication of a manufacturing process. <P>SOLUTION: The gate insulating film 13 and the gate electrode 14 of an nMOS transistor are formed with amorphous silicon on a silicon substrate 10, and n-type dopant such as As or Sb whose mass number is relatively large (the mass number is 70 or more) is injected by using the gate electrode 14 as a mask to form the source/drain area of the nMOS transistor. Thus, the amorphization of the gate electrode 14 is carried out. Then, a silicon oxide film 40 is formed so that the gate electrode 14 can be covered under the temperature conditions of a temperature(about 550°C) or less in which the gate electrode 14 is recrystallized, and heating treatment at about 1000°C is carried out. Thus, a strong compressive stress can remain in the gate electrode 14, a strong pulling stress can be applied to the channel area under this, and the carrier moving speed of the nMOS transistor can be improved. <P>COPYRIGHT: (C)2004,JPO |
