发明名称 EXCESS CURRENT PROTECTION CIRCUIT FOR SEMICONDUCTOR SWITCHING DEVICE, POWER MODULE, AND INVERTER CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To eliminate the need for re-triggering inverter operation even if an abnormality is detected with a transient excess current at the triggering of an inverter. <P>SOLUTION: An NAND circuit 14 at a final stage of an excess current protection circuit 10 outputs an error signal Fo to an MCU30 only when the other trigger signal Vos of an input signal rises to an H level even if an excess current is detected and a Q output of a latch 12 is at the H level. The MCU30 raises the trigger signal Vos from an L level to the H level when such a time arrives as is longer than an inverter acceleration period, but before an excess current is detected in a normal operation, after the inverter is triggered. So, even if a transient excess current is detected during the inverter acceleration period, no error signal Fo is outputted and a logic circuit 21 only cuts off the output of an input signal UNin. The circuit 10 itself may internally generate a trigger signal based on the input signal. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004173445(A) 申请公布日期 2004.06.17
申请号 JP20020337944 申请日期 2002.11.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 KURIAKI KAZUHIRO
分类号 H02M7/48;H02M7/537 主分类号 H02M7/48
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