| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, which are capable of surely and easily replacing silicon that forms a silicon wiring layer and a silicon contact plug with metal without more complicating a manufacturing process. SOLUTION: The semiconductor device is equipped with a gate electrode 22' of substituting metal formed on a semiconductor substrate 10, an impurity diffusion region 28n formed inside the semiconductor substrate 10, an insulating film 30 with an opening 32 reaching the impurity diffusion region 28n, and a contact plug 38 which is formed inside the opening 30 and equipped with a barrier metal layer 34 formed at least on the bottom of the opening 30 and a substituting metal film 62 formed on the barrier metal layer 34. Material forming the gate electrode and the contact plug is substituted with aluminum, so that contact resistance is reduced so as to enable a transistor to operate at a higher speed. COPYRIGHT: (C)2004,JPO
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