| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron gun for an electron beam lithography system capable of extensively reducing reflected or scattered electrons. SOLUTION: In the electron gun, a cathode 10 projecting the electron beam B, and a target 12 irradiated with the electron beam B are arranged facing each other. An anode 14, a deflection electrode 16, and a limiting aperture 18 are coaxially arranged between the cathode 10 and the target 12. The deflection electrode 16 is provided with a liner tube passing the electron beam B, and a deflection coil 24 attached to an outer circumference of the liner tube 22. The liner tube 22 is formed by an electron absorbing material such as carbon graphite. The limiting aperture 18 is formed by the electron absorbing material such as carbon graphite as in the liner tube 22. COPYRIGHT: (C)2004,JPO
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