发明名称 Method for forming a film
摘要 A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the-substrate, at a reduced power consumption.
申请公布号 US2004115365(A1) 申请公布日期 2004.06.17
申请号 US20030728987 申请日期 2003.12.08
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYANAGA AKIHARU;INOUE TOHRU;YAMAZAKI SHUNPEI
分类号 C23C16/00;C23C16/26;C23C16/515;C23C16/517;H01J37/32;(IPC1-7):H05H1/02 主分类号 C23C16/00
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