发明名称 |
Method for forming a film |
摘要 |
A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the-substrate, at a reduced power consumption.
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申请公布号 |
US2004115365(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20030728987 |
申请日期 |
2003.12.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYANAGA AKIHARU;INOUE TOHRU;YAMAZAKI SHUNPEI |
分类号 |
C23C16/00;C23C16/26;C23C16/515;C23C16/517;H01J37/32;(IPC1-7):H05H1/02 |
主分类号 |
C23C16/00 |
代理机构 |
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地址 |
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