发明名称 |
Manufacture of semiconductor device having STI and semiconductor device manufactured |
摘要 |
A semiconductor device manufacture method has the steps of: (a) forming a polishing stopper layer over a semiconductor substrate; (b) etching the semiconductor substrate to form a trench; (c) forming a first liner insulating layer of silicon oxide over the surface of the trench; (d) forming a second liner insulating layer of silicon nitride over the first liner insulating layer, the second liner insulating layer having a thickness of at least 20 nm or at most 8 nm; (e1) depositing a third liner insulating layer of silicon oxide over the second liner insulating layer by plasma CVD at a first bias; and (e2) depositing an isolation layer of silicon oxide by plasma CVD at a second bias higher than the first bias, the isolation layer burying a recess defined by the third liner insulating layer.
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申请公布号 |
US2004115897(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20030721870 |
申请日期 |
2003.11.26 |
申请人 |
FUJITSU LIMITED |
发明人 |
INOUE KENGO;MORI TOSHIFUMI;NAKAMURA RYOU;OHTA HIROYUKI;SAIKI TAKASHI |
分类号 |
H01L21/76;H01L21/762;H01L21/8238;H01L27/08;H01L29/78;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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