Heating assembly for monocrystalline substrate, e.g. sapphire substrate with resistance heater, using secondary heater at partial oxygen

摘要

The heating assembly (10) for sapphire wafer (6) comprises resistance heater (1) and has secondary heater (7) for sapphire substrate heating. Preferably the secondary heater completely surrounds resistance heater in the plane orthogonal to expansion direction of resistance heater. Typically wire is used as resistance heater and tube as secondary heater, with absorption layer (3) on side facing resistance heater. There is adapting facility for wavelengths of secondary heater to absorption capacity of sapphire wafer.