| 摘要 |
PURPOSE: A method of determining parameters for lithography, a computer system and a computer program therefor, and a method of manufacturing a device and the device manufactured thereby are provided to obtain a proper process window with sufficient process tolerance for a range of a feature or a feature group, and to optimize the intensity distribution of illumination while combining satisfactorily OPC(Optical Proximity Correction). CONSTITUTION: A plurality of features in a necessary pattern for imaging are selected(S10). Radiation of a radiation system is notionally divided into a plurality of source elements. A process window for each selected feature is calculated for each source element, then OPC rules for optimizing the overlap of the calculated process windows are determined(S20). Desired source elements are selected from all the source elements, so that the overlapping of the process windows and the OPC rules are satisfied with predetermined criteria(S30,S35). The first data for the selected source elements and the second data for the OPC rules are outputted(S40). Source intensity distribution is determined by the selected source elements.
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