METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER

摘要

PURPOSE: A method for manufacturing an epitaxial silicon wafer is provided to maximize the usable length of a silicon mono-crystal ingot by forming BMD(Bulk Micro Defect) having the concentration of more than 1E8 cm-3 using a silicon mono-crystal doped with nitrogen having the concentration of more less 1E14 cm-3. CONSTITUTION: Single crystal silicon is manufactured by doping nitrogen(S1). A slicing process is carried out on the single crystal silicon for forming the single crystal silicon into a silicon wafer type structure(S2). A lapping process is carried out on the sliced single crystal silicon for forming silicon wafers(S3). A predetermined silicon wafer having doped nitrogen concentration of more less 1E14 cm-3 is prepared out of the silicon wafers(S4). N-BMD nuclei are formed in the silicon wafer(S5). An etching process is carried out on the silicon wafer(S6). A polishing process is carried out on the silicon wafer(S7). An epitaxial layer is formed on the silicon wafer(S8).