| 摘要 |
PURPOSE: A method for manufacturing an array semiconductor laser diode is provided to increase the gain value by enlarging the area injected thereto the real current as well as to improve the I-V characteristics. CONSTITUTION: A method for manufacturing an array semiconductor laser diode includes the steps of: growing the device structure; performing the masking process to form the ridge after the device is grown; patterning the ridge mask(201) having a front portion equal to the conventional mask and a rear portion being larger than that of the conventional mask; etching into a polynomial shape injected thereto the real current after the mask patterning; forming the current blocking layer after the etching step; and forming the ohmic by depositing the metal after the ridge mask(201) is removed.
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