| 摘要 |
PURPOSE: A slurry composition for final polishing of silicon wafer is provided to increase polishing speed and improve polishing characteristics. CONSTITUTION: A slurry composition for final polishing of silicon wafer contains colloid silica of 2-10 weight% as an abrasive, ammonia of 0.5-1.5 weight%, and a hydroxide alkyl cellulose based water-soluble polymer thickener of 0.2-1.0 weight%. At this time, the grain diameter of the colloid silica is in the range of 60-80 nm. The last polishing slurry composition further contains an amine compound of 0.01-1 weight%, quaternary ammonium salt of 0.01-0.5 weight%, and deionized water. Preferably, the amine compound is one selected from a group consisting of monoethanolamine, diethylene glycolamine, diethanolamine, triethanolamine, (dimethylamino)ethoxyethanol, aminoethylethanolamine, or piperidineethanol.
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