| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device using vertical nanotubes. <P>SOLUTION: The memory device includes a substrate 11 on which a source area 13 is formed, a nanotube column array that is formed by arranging a plurality of nanotube columns 10 which are vertically grown on the substrate 11 and whose one-side edges are linked to the source area 13 to form an electron-transfer channel, memory cells 19 formed on the peripheral surfaces of the nanotube columns 10, a control gate 17 formed on the peripheral surfaces of the memory cells 19, and a drain area 15 linked to the other-side edges of the nanotube columns 10. Using a simple process with no need of ion doping, a very highly integrated nonvolatile memory device can be embodied. <P>COPYRIGHT: (C)2004,JPO</p> |
