| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that control is difficult in detailed ranges since VF, IR characteristics of a Schottky barrier diode are conventionally controlled by one kind of metal layer and a Schottky junction area. SOLUTION: Metal layers forming a Schottky junction are two kinds of metal layers having differentϕBn. The VF, IR characteristics can be controlled in the detailed ranges by a Schottky junction area ratio of the two metal layers. Two kinds ofϕBn are obtained on heat treatment conditions in Ti, thereby continuous treatment can be done. The area ratio is changed to reduce VF in the same chip size. Further, the desired VF characteristics are easily controlled, thereby miniaturizing the chip size, reducing costs and improving efficiency in manufacture steps. COPYRIGHT: (C)2004,JPO |
