| 摘要 |
PROBLEM TO BE SOLVED: To reduce variations of the amount protrusion of a buried oxide film in a process for forming a trench type element isolating structure. SOLUTION: A laminated film comprising a thermal oxide film 2, a polysilicon film 3, and a silicon nitride film 4 is formed on a silicon substrate 1, and the laminated film is patterned by using a resist pattern 5 as the mask. An element isolating trench 6 is formed in the silicon substrate 1 with the now-patterned laminated film serving as the mask, and a silicon oxide film 7 is buried in the element isolating trench 6. The silicon nitride film 4 is removed, and then the silicon oxide film 7 is removed by CMP with the polysilicon film 3 acting as the stop film. The polysilicon film 3 and the thermal oxide film 2 are then removed. COPYRIGHT: (C)2004,JPO
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