发明名称 |
Vertical MOSFET SRAM cell |
摘要 |
A method of forming an SRAM cell device includes the following steps. Form pass gate FET transistors and form a pair of vertical pull-down FET transistors with a first common body and a first common source in a silicon layer patterned into parallel islands formed on a planar insulator. Etch down through upper diffusions between cross-coupled inverter FET transistors to form pull-down isolation spaces bisecting the upper strata of pull-up and pull-down drain regions of the pair of vertical pull-down FET transistors, with the isolation spaces reaching down to the common body strata. Form a pair of vertical pull-up FET transistors with a second common body and a second common drain. Then, connect the FET transistors to form an SRAM cell.
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申请公布号 |
US2004113207(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20020318495 |
申请日期 |
2002.12.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;GLUSCHENKOV OLEG;MANDELMAN JACK A.;RADENS CARL J. |
分类号 |
G11C11/412;H01L21/8244;H01L21/84;H01L27/11;H01L27/12;(IPC1-7):H01L21/00;H01L21/824;H01L29/76;H01L31/062;H01L31/119 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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