| 摘要 |
PURPOSE: A method for manufacturing a photoresist pattern is provided to be capable of carrying out a curing process at a low temperature for a short time. CONSTITUTION: A polyimide layer is coated on a wafer(1). The polyimide layer contains a predetermined agent. A soft baking process is carried out on the resultant structure at the temperature of 90 °C for 90 seconds. A photoresist pattern(3a) is formed by sequentially carrying out an exposing and developing process. A curing process is carried out on the resultant structure at the temperature of 150-250 °C for 5 minutes. The polyimide layer contains the predetermined agent of 0.1-5 wt%. The polyimide layer has a thickness of 2-15 μm.
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