| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a capacitor capacity can be easily controlled, and to provide its manufacturing method. <P>SOLUTION: A silicon nitride film 4 is formed so as to cover a plurality of gate electrodes 3 formed on a silicon substrate 1 via a gate oxide film 2, and a first interlayer dielectric 5 is formed on the silicon nitride film 4. A plug 6 is formed in the first interlayer dielectric 5, and a stopper film 7 and a second interlayer dielectric 8 are formed. While an anti-reflection film 9 and a resist pattern 10 are formed on the second interlayer dielectric 8, a capacitor hole 11 is formed between the surface of the second interlayer dielectric 8 and a position-controlled bottom face 11a in the first interlayer dielectric 5 through the stopper film 7 by dry etching process using the resist pattern 10 as a mask. In the capacitor hole 11, a lower electrode 12 whose surface is roughened, a capacitive insulation film 13, and an upper electrode 14 are formed. <P>COPYRIGHT: (C)2004,JPO |
