| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a state where a bump is scarcely formed so as to realize a semiconductor device which hardly causes a bonding failure in an assembly process thereafter. <P>SOLUTION: A barrier metal 4 is formed on a wafer 1 where a semiconductor electrode 2 and a surface protective film 3 are formed, then a bump resist 5 is applied on all the surface of the wafer 1, and an opening is formed to a part of the bump resist 5 where a bump 6 is to be formed. At this time, the bump resist 5 is provided with an opening located on the semiconductor electrode 2, and a protruding bump resist 5a is provided at the center of the opening. Thereafter, the bump 6 is formed through a plating process, then the bump resist 5 is removed, and the disused part of the barrier metal 4 is removed. In the plating process, the bump 6 is formed in a state in which the protruding bump resist 5a has been formed at the center of the opening, so that air is prevented from spreading through all the bump 6 by the tension of a plating solution, and a non-plated area occurs only partially. <P>COPYRIGHT: (C)2004,JPO |
