发明名称 |
SEMICONDUCTOR SUBSTRATE SEGMENT, MANUFACTURING METHOD THEREOF, LAMINATED SEMICONDUCTOR SUBSTRATE IN WHICH THE SEGMENTS ARE LAMINATED, AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate segment suitable for three-dimensional lamination, a manufacturing method thereof, a laminated semiconductor substrate in which the segments are laminated, and a manufacturing method thereof. SOLUTION: A device 3, a photosensitized insulating layer 4, and a wiring 5 are provided on a device embedding side of a semiconductor substrate 2, and a first through micro conductor 6 is provided on a substrate end side. A device electrode is connected to the first through micro conductor 6 by the wiring 5. On a device non-embedding side 2b, a connection end 6a which is a tip of the first through micro conductor 6 is so formed as to protrude by a prescribed length. COPYRIGHT: (C)2004,JPO
|
申请公布号 |
JP2004172453(A) |
申请公布日期 |
2004.06.17 |
申请号 |
JP20020337974 |
申请日期 |
2002.11.21 |
申请人 |
TORAY ENG CO LTD;FUJIKURA LTD |
发明人 |
KANBARA KENJI;YAMAMOTO SATOSHI |
分类号 |
H01L23/52;H01L21/3205;H01L23/12;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/12;H01L21/320 |
主分类号 |
H01L23/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|