发明名称 SEMICONDUCTOR SUBSTRATE SEGMENT, MANUFACTURING METHOD THEREOF, LAMINATED SEMICONDUCTOR SUBSTRATE IN WHICH THE SEGMENTS ARE LAMINATED, AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor substrate segment suitable for three-dimensional lamination, a manufacturing method thereof, a laminated semiconductor substrate in which the segments are laminated, and a manufacturing method thereof. SOLUTION: A device 3, a photosensitized insulating layer 4, and a wiring 5 are provided on a device embedding side of a semiconductor substrate 2, and a first through micro conductor 6 is provided on a substrate end side. A device electrode is connected to the first through micro conductor 6 by the wiring 5. On a device non-embedding side 2b, a connection end 6a which is a tip of the first through micro conductor 6 is so formed as to protrude by a prescribed length. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004172453(A) 申请公布日期 2004.06.17
申请号 JP20020337974 申请日期 2002.11.21
申请人 TORAY ENG CO LTD;FUJIKURA LTD 发明人 KANBARA KENJI;YAMAMOTO SATOSHI
分类号 H01L23/52;H01L21/3205;H01L23/12;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/12;H01L21/320 主分类号 H01L23/52
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