| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of reducing light-induced etching and redeposition of metal used to make mutually connected wires during a semiconductor manufacturing process, e.g., copper. SOLUTION: The light-induced etching and redeposition of metal is caused by exposure to light for pn joint that produces a photovoltaic cell effect. The photon inhibition layer 13 is used to reduce an amount of exposure for the pn joint. The photon inhibition layer 13 is a direct band gap having a band gap energy smaller than the low end of an energy spectrum of a common light source used for a semiconductor manufacturing facility (generally, smaller than 1.7eV). Accordingly, it is possible to reduce the etching and redeposition of light induction of the metal. COPYRIGHT: (C)2004,JPO
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