| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystallization apparatus which can form a crystal nucleus at a desired position and can realize sufficient lateral growth of the crystal nucleus to form a crystallized semiconductor film having a large grain size. SOLUTION: This crystallization apparatus, which is provided with a mask (1) and an illumination system (2), applies light having light intensity distribution with inverted peak pattern on a semiconductor film (3) via the mask to form a crystallized semiconductor film. The mask is equipped with a light absorption layer having light absorption characteristics appropriate for light intensity distribution with inverted peak pattern, a light scattering layer having light scattering characteristics, a light reflection layer having light reflection characteristics, a light refraction layer having light refraction characteristics, or a light diffraction layer having light diffraction characteristics. COPYRIGHT: (C)2004,JPO
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