METHOD FOR IMPROVING OHMIC CONTACT OF P TYPE NITRIDE BASED COMPOUND SEMICONDUCTOR

摘要

PURPOSE: A method for improving the ohmic contact of P type nitride based compound semiconductor is provided to reduce the driving voltage for a light emitting device and improve the light emitting efficiency and lifetime of the light emitting device by diffusing metal material through a heat treatment. CONSTITUTION: A P type GaN compound semiconductor layer(220) is grown on an LED(Light Emitting Diode) structure layer(210). A metal layer(230) is deposited on the P type GaN compound semiconductor layer under a reaction furnace cooling process. The metal layer is diffused into the P type GaN compound semiconductor layer by carrying out the first heat treatment at the temperature of 100-800°C under predetermined gas atmosphere. Then, the second heat treatment is carried out on the resultant structure at the temperature of 500-1000°C.