SEMICONDUCTOR DEVICE WITH REDUCED DISHING AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method of manufacturing the same are provided to reduce dishing of an interlayer dielectric at a periphery of a mark region by using a dishing prevention pattern. CONSTITUTION: The first patterns(3a,3b) are formed on a semiconductor substrate(1) within a device region(A1). The second pattern(3c) is formed on the substrate within an alignment mark region(A2). The second pattern is used as a dishing prevention pattern. An interlayer dielectric(4) for enclosing the first and second patterns is deposited thereon. The interlayer dielectric on the first and second patterns is selectively etched by using a predetermined photoresist pattern. The photoresist pattern is removed therefrom. The first and second patterns are exposed by planarizing the interlayer dielectric using CMP(Chemical Mechanical Polishing).