| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method which suppresses reduction of an etching rate in a non-deposit process without carrying out seasoning immediately after dry cleaning. SOLUTION: The plasma treatment method is provided wherein a single treatment chamber is used for a step for plasma treatment which substantially allows deposits to attach to the treatment chamber, and for a step of plasma treatment which substantially allows no deposits to attach to the treatment chamber. The method comprises at least a step of dry cleaning for cleaning the treatment chamber by using a dummy substrate during a period between the plasma treatment accompanied by deposits and the plasma treatment without accompanied by deposits. The dry cleaning step is a step for carrying out dry cleaning by providing the treatment chamber with a gas for removing deposits produced in the treatment chamber during the plasma treatment and a gas capable of etching the dummy substrate. COPYRIGHT: (C)2004,JPO
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