发明名称 Radio frequency power amplifier and communication system
摘要 There is provided not only a radio frequency power amplifier using an SiGe HBT subject to a little amplification distortion, but also a communication system using the same. A conventional radio frequency power amplifier provides base bias paths of transistors Q1 through QN (SiGe HBT) with bias resistors R11 through R1N having resistance values three to five times higher than those of a ballast resistor attached to each transistor's base. A coil LB is provided in parallel with the bias resistor as a means for compensating a voltage drop due to direct current component IDC flowing through the bias resistor. Addition of the bias resistor suppresses non-linearity of low-frequency variations in an output current. Addition of the coil compensates for voltage drop. Accordingly, the maximum linear output power can be improved. As a result, it is possible to provide the power amplifier subject to a little amplification distortion within a wide output range.
申请公布号 US2004113699(A1) 申请公布日期 2004.06.17
申请号 US20030688976 申请日期 2003.10.21
申请人 RENESAS TECHNOLOGY CORP. 发明人 KONDO MASAO;MASUDA TORU;WASHIO KATSUYOSHI
分类号 H03F1/32;H03F1/30;H03F3/21;(IPC1-7):H03F3/68 主分类号 H03F1/32
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