Thin-film deposition apparatus and method for rapidly switching supply of source gases

摘要

In a thin-film deposition apparatus, a plurality of kinds of source gases are supplied to a reaction chamber one kind at a time by switching the supply of the source gases at high speed so as to reduce a process time. A supply passage is connected to the reaction chamber so as to supply the source gases and an inert gas to the reaction chamber. A source-gas supply opening is provided in the supply passage so as to supply each of the source gases to the supply passage. A source-gas valve is also provided in the supply passage for opening and closing the source-gas supply opening.