发明名称 |
Light extraction efficiency of gan based leds |
摘要 |
An optoelectronic device has a semiconductor structure (10) on a substrate (12). The shape of the device in plan is that of a quadrilateral having two acute included angles (alpha1, alpha2) and two obtuse included angles (alpha1, alpha2). One of the electrode-pad units (31) is located distally from the vertices of the quadrilateral. The device may have a transparent electrode (32).
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申请公布号 |
US2004113168(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20030399635 |
申请日期 |
2003.11.17 |
申请人 |
ELIASHEVICH IVAN;WANG MICHAEL |
发明人 |
ELIASHEVICH IVAN;WANG MICHAEL |
分类号 |
H01L33/20;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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