| 摘要 |
PROBLEM TO BE SOLVED: To provide an ECR sputtering apparatus capable of forming a plurality of kinds of thin films. SOLUTION: The ECR sputtering apparatus forms a multilayer film on a substrate S by generating a plasma by electron cyclotron resonance and sputtering targets 11A, 11B with ions 21 in the generated plasma. A plurality of targets 11A, 11B are placed in a film formation chamber 3. In forming one layer of the multilayer film, a bias voltage from a DC bias power source 12A is applied to target 11A; at that time, the bias voltage on target 11B is cut off and a shutter 20 is closed. On the other hand, in forming the other layer, the bias voltage is applied to target 11B; at that time, the bias voltage on target 11A is cut off and the shutter 20 is closed. Such operations are repeated to form the multilayer film. COPYRIGHT: (C)2004,JPO
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