发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
Disclosed is a method of manufacturing a semiconductor device. A gate is formed on a given region of a semiconductor substrate. Spacers are then formed using DCS-HTO or TEOS. Hydrogen remaining within the spacers is removed by a RTA process under nitrogen atmosphere and nitride films are formed on the spacers at the same time. In case of a flash memory device, a retention characteristic can be improved. A process of forming the nitride film additionally required in a subsequent contact hole formation process may be omitted. The sheet resistance of the gate could be improved by promoting growth of a crystal grain of a tungsten silicide film constituting a control gate.
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申请公布号 |
US2004115894(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20030610628 |
申请日期 |
2003.07.02 |
申请人 |
PARK SANG WOOK;LEE SEUNG CHEOL |
发明人 |
PARK SANG WOOK;LEE SEUNG CHEOL |
分类号 |
H01L21/8247;H01L21/336;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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