发明名称 |
Magnetic memory device, method for writing on the same and method for reading from the same |
摘要 |
Each memory cell is constituted by a pair of magnetic memory elements. The magnetic memory elements are connected at one ends to sense bit lines, and at the other ends to a sense word line through a pair of reverse current preventing diodes, respectively. A constant current circuit is disposed on the grounded side of the sense word line. The constant current circuit has a function of fixing a current flowing through the sense word line, and is constituted by a constant voltage generating diode, a transistor and a current limiting resistor.
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申请公布号 |
US2004114425(A1) |
申请公布日期 |
2004.06.17 |
申请号 |
US20030669561 |
申请日期 |
2003.09.25 |
申请人 |
TDK CORPORATION |
发明人 |
EZAKI JOICHIRO;KAKINUMA YUJI;KOGA KEIJI |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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